A silicon controlled switch (SCS) is essentially an SCR equipped with a second gate terminal. Like a conventional switch, and unlike […]

General Algebraic Solution We can obtain general algebraic expressions for the bias points in POMS and NMOS circuits hy solving

Figure 7-36 shows a set of drain characteristics resulting from repetitions of the process we have described. with set 10

is attached to a line that is separated from the rest of the symbol, to emphasize that the gate is

The metal-oxide-semiconductor GET (SAMOSET) is similar in many respects to its JFET counterpart, in that both have drain, gate, and

MANUFACTURER’S DATA SHEETS Figures 7-25 and 7-26 show typical data sheets for a series of N-channel JFETs: the 2ND, I

The general form Dr the algebraic solution for the bias point in a voltage-divider bias circuit can be found by

Thus, (-3 Y, 5 mA) is another point on the bias line. We can then draw a straight line between

Equations 7-4 are the equations of the load lines for N- and P-channel JFETs and each can be plaited on

Transfer Characteristics The transfer characteristic of a lFET is a plot of output current versus input voltage. for a fixed