Figure 6-10 shows another bias design that is sometimes used to stabilize a CE amplifier against parameter changes. Note that […]

Because the voltage-divider bias circuit (Figure 6-11) has been so widely used. certain practical, time-tested guidelines have evolved for its

The methods used to bias amplifiers in integrated circuits are substantially different from those used in discrete circuits. To understand

The method most widely used for integrated-circuit fabrication is now also used to produce discrete devices. The process to which

illustrates how the steps we have described so far could be used to create two PN junctions in an N-typc

In the fabrication of most monolithic integrated circuits. the processes we have described for producing tiny P and N regions

has a sheet resistance of 125 H/square. If the P material has a conductivity of 200{) Spurn, find thickness of

We have mentioned that a reverse-biased diode has capacitance. Recall that capacitance exists when two conducting regions are separated by

Although some integrated circuits are available in cylindrical metal cases, such as the TO-5 enclosures used to package discrete transistors,

As already mentioned, it is not practical to bias integrated-circuit BJT amplifiers using resistor-capacitor’ networks, as is the practice in